Direct Plasma Chemical Vapor Deposition (DC-PECVD)

Application:

* Layering of different materials for microfabrication in different forms including single crystals, polycrystals, amorphous and epitaxial growth structures.

* Abrasion and corrosion resistant coatings on tools, bearings and drills

* Carbon nanotubes

* Production of semiconductor devices


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Product Introduction:

Chemical vapor deposition (CVD) is one of the most important coating methods.

This method is widely used in both industrial and research field. In fact, this method itself includes a variety of methods and devices that all work based on some common features. These features include: the use of a gaseous mixture as a coating precursor or final product (the final product may not have a coating application (e.g., carbon nanotubes)), the use of a plasma or heat source to encourage reactions between gaseous species, and finally Preparation of conditions for deposition of products on a substrate. The thermal source can be in the form of thermal filaments, microwaves or electric discharge.

Plasma-enhanced chemical vapor deposition (PECVD) is a type of CVD process that the presence of the plasma environment affects all CVD processes and increases the speed and efficiency of related reactions at relatively lower temperatures (compared to the use of the CVD process without the presence of plasma) and promotes This method is often used to produce carbon nanotubes.

Technical Specifications:

Device model DC-PECVD
No. of furnaces Includes two ovens (diameter of 80 mm and a length of 80 cm)
Maximum temperature of the thermal zone 750°C
The amount of vacuum 5 × 10-2 torr
Reactor Quartz
Power supply Direct voltage source up to 1000 V and 100 mA
Gas flow controller Including two flow controllers of acetylene and

hydrogen gases

Device dimensions
Company

Type

This product is a final B2B equipment.

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